2019年第66回応用物理学会春季学術講演会

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一般セッション(口頭講演)

10 スピントロニクス・マグネティクス » 10.4 半導体スピントロニクス・超伝導・強相関

[12p-M101-1~14] 10.4 半導体スピントロニクス・超伝導・強相関

2019年3月12日(火) 13:00 〜 17:00 M101 (H101)

高村 陽太(東工大)、レ デゥック アイン(東大)

13:00 〜 13:15

[12p-M101-1] [Young Scientist Presentation Award Speech] Optically induced spin transport in semi-metal heterostructures

Hana Hirose1、Naoto Ito1、Masashi Kawaguchi1、Masamitsu Hayashi1,2 (1.The Univ. of Tokyo、2.National Inst. for Materials Science)

キーワード:circular photogalvanic effect, spin transport

Anisotropic photocurrents appear under illumination of circularly polarized light due to spin-momentum locked bands. This effect is known as the circular photogalvanic effect (CPGE). We have studied the CPGE in (semi)metallic heterostructures and revealed the presence of spin-momentum locked bands of Rashba type at interfaces. The photocurrents induced by circularly polarized light under front and back illumination are studied to reveal contributions from the bulk and interface(s).