Oral presentation

10 Spintronics and Magnetics » 10.4 Semiconductor spintronics, superconductor, multiferroics

[12p-M101-1~14] 10.4 Semiconductor spintronics, superconductor, multiferroics

Tue. Mar 12, 2019 1:00 PM - 5:00 PM M101 (H101)

Yota Takamura(Tokyo Tech), DUC ANh LE(Univ. Tokyo)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

▲ [12p-M101-1] [Young Scientist Presentation Award Speech] Optically induced spin transport in semi-metal heterostructures

〇Hana Hirose¹, Naoto Ito¹, Masashi Kawaguchi¹, Masamitsu Hayashi^1,2 (1.The Univ. of Tokyo, 2.National Inst. for Materials Science)

1:15 PM - 1:30 PM

▲ [12p-M101-2] Experimental evidence for non-thermal aspect of photo-excited precession of magnetization in (Ga,Mn)As

〇Hiro Munekata¹, Takashi Matsuda¹ (1.FIRST, Tokyo Tech)

1:30 PM - 1:45 PM

▲ [12p-M101-3] Imaging in-plane 90° magnetization switching in (Ga,Mn)As

〇Bassam MN Qadi¹, Yuya Sakatoku², Nozomi Nishizawa², Hiro Munekata² (1.Palestine Tech. Univ, 2.Tokyo Inst. of Tech)

1:45 PM - 2:00 PM

[12p-M101-4] STM/STS observation and electronic structure calculation of Mn in GaSb

〇Takashi Tatsumi¹, Miyuki Ando¹, Shigeru Kaku¹, Junji Yoshino¹ (1.Tokyo Tech)

2:00 PM - 2:15 PM

▲ [12p-M101-5] Inter-valence Charge Transfer in a Ru-doped Cobalt Ferrite CoFe₂O₄ Thin Film

〇MASAKI KOBAYASHI^1,2, MUNETOSHI SEKI^1,2, MASAHIRO SUZUKI³, MIHO KITAMURA⁴, ATSUSHI FUJIMORI³, KOJI HORIBA⁴, HIROSHI KUMIGASHIRA⁴, MASAAKI TANAKA^1,2, HITOSHI TABATA^1,2 (1.Univ. of Tokyo, 2.CSRN, Univ. of Tokyo, 3.Dep. Phys., Univ. of Tokyo, 4.KEK-IMSS)

2:15 PM - 2:30 PM

[12p-M101-6] Estimation of Fermi surface position and magnetic properties by PL measurement of Diluted Magnetic Semiconductor GaGdAs:Si/GaAs superlattice.

〇Makoto Takafuji¹, Sho Kato¹, Akihiro Funabiki¹, Hajime Yoshida¹, Hayato Miyagawa¹, Yuji Hazama², Hidefumi Akiyama² (1.Kagawa Univ., 2.ISSP.)

2:45 PM - 3:00 PM

▲ [12p-M101-7] Heavily Fe-doped n-type ferromagnetic semiconductor (In,Fe)Sb with high Curie temperature and large magnetic anisotropy

〇Tu Thanh Nguyen^1,2, Nam Hai Pham^3,4, Duc Anh Le¹, Masaaki Tanaka^1,4 (1.Tokyo Univ., 2.HCMC Pedagogy Univ., 3.Tokyo Tech. Inst., 4.CSRN Tokyo Univ.)

3:00 PM - 3:15 PM

▲ [12p-M101-8] Magnetic anisotropy switching in heavily-Fe-doped high-Curie-temperature ferromagnetic semiconductor (Ga_0.7,Fe_0.3)Sb with a critical thickness

〇(DC)Shobhit Goel¹, Le Duc Anh¹, Shinobu Ohya^1,2, Masaaki Tanaka^1,2 (1.The Univ. of Tokyo, 2.CSRN)

3:15 PM - 3:30 PM

▲ [12p-M101-9] Electronic structure of p-type ferromagnetic semiconductor (Ga,Fe)Sb: Valence band and impurity band

〇Takahito Takeda¹, Masahiro Suzuki², Le Duc Anh^1,3, Yosuke Nonaka², Thorsten Schmitt⁴, Satoshi Yoshida⁵, Masato Sakano⁵, Kyoko Ishizaka⁵, Yukiharu Takeda⁶, Shin-ichi Fujimori⁶, Munetoshi Seki^1,3, Hitoshi Tabata^1,3, Atsushi Fujimori², Masaaki Tanaka^1,3, Vladimir N. Strocov⁴, Masaki Kobayashi^1,3 (1.Grad. Sch. Eng., Univ. of Tokyo, 2.Dep. Phys., Univ. of Tokyo, 3.CSRN, Univ. of Tokyo, 4.Swiss Light Source, 5.QPEC, Grad. Sch. Eng., Univ. of Tokyo, 6.JAEA/SPring-8)

3:30 PM - 3:45 PM

▼ [12p-M101-10] Giant magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature

〇Kengo Takase¹, Le Duc Anh^1,2, Kosuke Takiguchi¹, Nguyen Thanh Tu¹, Masaaki Tanaka^1,3 (1.Tokyo Univ. Eng., 2.Tokyo Univ. Inst. of Eng. Innov., 3.CSRN)

4:00 PM - 4:15 PM

▼ [12p-M101-11] Large spin-dependent magnetoresistance and output voltage in the nanoscale Si spin-valve devices

〇(D)Dinhhiep Duong¹, Masaaki Tanaka², Namhai Pham^1,2 (1.Tokyo Inst. Tech., 2.Univ. of Tokyo)

4:15 PM - 4:30 PM

▲ [12p-M101-12] Fabrication and evaluation of lateral spin-valve devices using MnAs spin injector

〇Keita Yamane¹, Kenichiro Yao¹, Masaaki Tanaka², Pham Nam Hai^1,2 (1.Tokyo Inst., 2.Tokyo Univ.)

4:30 PM - 4:45 PM

▲ [12p-M101-13] Large spin-valve effect in a lateral spin-valve device with MnGa electrodes

〇Koki Chonan¹, Nguyen Huynh Duy Khang¹, Masaaki Tanaka², Pham Nam Hai^1,2 (1.Tokyo Tech., 2.Univ. Tokyo)

4:45 PM - 5:00 PM

[12p-M101-14] Growth of (110)-oriented GaAs/AlGaAs quantum wells by MBE with As₂ and measurement of recombination lifetime and spin relaxation time

〇Ryogo Okamoto¹, Satoshi Iba², Hidekazu Saito², Shinji Yuasa², Yuzo Ohno¹ (1.Univ. of Tsukuba, 2.AIST)

Session information

[12p-M101-1~14] 10.4 Semiconductor spintronics, superconductor, multiferroics

▲ [12p-M101-1] [Young Scientist Presentation Award Speech] Optically induced spin transport in semi-metal heterostructures

▲ [12p-M101-2] Experimental evidence for non-thermal aspect of photo-excited precession of magnetization in (Ga,Mn)As

▲ [12p-M101-3] Imaging in-plane 90° magnetization switching in (Ga,Mn)As

[12p-M101-4] STM/STS observation and electronic structure calculation of Mn in GaSb

▲ [12p-M101-5] Inter-valence Charge Transfer in a Ru-doped Cobalt Ferrite CoFe₂O₄ Thin Film

[12p-M101-6] Estimation of Fermi surface position and magnetic properties by PL measurement of Diluted Magnetic Semiconductor GaGdAs:Si/GaAs superlattice.

▲ [12p-M101-7] Heavily Fe-doped n-type ferromagnetic semiconductor (In,Fe)Sb with high Curie temperature and large magnetic anisotropy

▲ [12p-M101-8] Magnetic anisotropy switching in heavily-Fe-doped high-Curie-temperature ferromagnetic semiconductor (Ga_0.7,Fe_0.3)Sb with a critical thickness

▲ [12p-M101-9] Electronic structure of p-type ferromagnetic semiconductor (Ga,Fe)Sb: Valence band and impurity band

▼ [12p-M101-10] Giant magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature

▼ [12p-M101-11] Large spin-dependent magnetoresistance and output voltage in the nanoscale Si spin-valve devices

▲ [12p-M101-12] Fabrication and evaluation of lateral spin-valve devices using MnAs spin injector

▲ [12p-M101-13] Large spin-valve effect in a lateral spin-valve device with MnGa electrodes

[12p-M101-14] Growth of (110)-oriented GaAs/AlGaAs quantum wells by MBE with As₂ and measurement of recombination lifetime and spin relaxation time

Authentication

Session information

[12p-M101-1~14] 10.4 Semiconductor spintronics, superconductor, multiferroics

▲ [12p-M101-1] [Young Scientist Presentation Award Speech] Optically induced spin transport in semi-metal heterostructures

▲ [12p-M101-2] Experimental evidence for non-thermal aspect of photo-excited precession of magnetization in (Ga,Mn)As

▲ [12p-M101-3] Imaging in-plane 90° magnetization switching in (Ga,Mn)As

[12p-M101-4] STM/STS observation and electronic structure calculation of Mn in GaSb

▲ [12p-M101-5] Inter-valence Charge Transfer in a Ru-doped Cobalt Ferrite CoFe2O4 Thin Film

[12p-M101-6] Estimation of Fermi surface position and magnetic properties by PL measurement of Diluted Magnetic Semiconductor GaGdAs:Si/GaAs superlattice.

▲ [12p-M101-7] Heavily Fe-doped n-type ferromagnetic semiconductor (In,Fe)Sb with high Curie temperature and large magnetic anisotropy

▲ [12p-M101-8] Magnetic anisotropy switching in heavily-Fe-doped high-Curie-temperature ferromagnetic semiconductor (Ga0.7,Fe0.3)Sb with a critical thickness

▲ [12p-M101-9] Electronic structure of p-type ferromagnetic semiconductor (Ga,Fe)Sb: Valence band and impurity band

▼ [12p-M101-10] Giant magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature

▼ [12p-M101-11] Large spin-dependent magnetoresistance and output voltage in the nanoscale Si spin-valve devices

▲ [12p-M101-12] Fabrication and evaluation of lateral spin-valve devices using MnAs spin injector

▲ [12p-M101-13] Large spin-valve effect in a lateral spin-valve device with MnGa electrodes

[12p-M101-14] Growth of (110)-oriented GaAs/AlGaAs quantum wells by MBE with As2 and measurement of recombination lifetime and spin relaxation time

Authentication

▲ [12p-M101-5] Inter-valence Charge Transfer in a Ru-doped Cobalt Ferrite CoFe₂O₄ Thin Film

▲ [12p-M101-8] Magnetic anisotropy switching in heavily-Fe-doped high-Curie-temperature ferromagnetic semiconductor (Ga_0.7,Fe_0.3)Sb with a critical thickness

[12p-M101-14] Growth of (110)-oriented GaAs/AlGaAs quantum wells by MBE with As₂ and measurement of recombination lifetime and spin relaxation time