The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

10 Spintronics and Magnetics » 10.4 Semiconductor spintronics, superconductor, multiferroics

[12p-M101-1~14] 10.4 Semiconductor spintronics, superconductor, multiferroics

Tue. Mar 12, 2019 1:00 PM - 5:00 PM M101 (H101)

Yota Takamura(Tokyo Tech), DUC ANh LE(Univ. Tokyo)

2:45 PM - 3:00 PM

[12p-M101-7] Heavily Fe-doped n-type ferromagnetic semiconductor (In,Fe)Sb with high Curie temperature and large magnetic anisotropy

Tu Thanh Nguyen1,2, Nam Hai Pham3,4, Duc Anh Le1, Masaaki Tanaka1,4 (1.Tokyo Univ., 2.HCMC Pedagogy Univ., 3.Tokyo Tech. Inst., 4.CSRN Tokyo Univ.)

Keywords:ferromagnetic semiconductor, high Curie temperature, large magnetic anisotropy

We present high-temperature ferromagnetism and large magnetic anisotropy in heavily Fe-doped n-type ferromagnetic semiconductor (In1-x,Fex)Sb (x = 20 – 35%) thin films grown by low-temperature molecular beam epitaxy. The (In1-x,Fex)Sb thin films with x = 20 – 35% maintain the zinc-blende crystal and band structure with single-phase ferromagnetism. The Curie temperature (TC) of (In1-x,Fex)Sb reaches 390 K at x = 35%, which is significantly higher than room temperature and the highest value so far reported in III-V based ferromagnetic semiconductors. Moreover, large coercive force (HC = 160 Oe) and large remanent magnetization (Mr/MS = 71%) have been observed for a (In1-x,Fex)Sb thin film with x = 35%. Our results indicate that the n-type ferromagnetic semiconductor (In1-x,Fex)Sb is very promising for spintronics devices operating at room temperature.