[12p-M101-1~14] 10.4 Semiconductor spintronics, superconductor, multiferroics

[12p-M101-4] STM/STS observation and electronic structure calculation of Mn in GaSb

〇Takashi Tatsumi¹, Miyuki Ando¹, Shigeru Kaku¹, Junji Yoshino¹ (1.Tokyo Tech)

Keywords:STM, GaSb

Mn in diluted magnetic semiconductors has been investigated using STM. It is known that the hole state shows an asymmetric bow-tie shape in a semiconductor with deep binding energy, and the hole state becomes a more asymmetrical triangle in a semiconductor with shallow binding energy. We considered the origin of this asymmetry and its relation with binding energy by Tight-binding calculation. In the experiments, the Mn doped layer depth dependence of the Mn level in GaSb was examined in detail by dI / dV - V measurement.