[12p-M111-1~13] 15.7 Crystal characterization, impurities and crystal defects

[12p-M111-9] Quality of silicon substrate and point defects (1) 4.5 Eras in 70 years

〇Naohisa Inoue^1,2 (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)

Keywords:silicon crystal, point defect, device

70 years history of silicon crystal was divided to 4.5 Eras according to the major applications, Tr and IC Era, LSI Era, (IC chip Era), IT Era and Infra (power device) Era. Major demands were high quality for the used device and cost. Major defects were swirl, OSF, void and CiOi complex. Their causes were intrinsic point defect, oxygen/carbon/nitrogen and stress.-Major technologies contributed were TEM, IR, various control and theory.