[12p-M113-1~9] 15.5 Group IV crystals and alloys

[12p-M113-7] Crystal growth of Ge and GeSn thin films on glass substrates by CW laser annealing

〇Ryo Matsumura¹, Wipakorn Jevasuwan¹, Naoki Fukata¹ (1.NIMS MANA)

Keywords:semiconductor, Germanium, GeSn

In order to realize next generation thin-film transistors and/or 3D-LSIs, CW laser annealing of Ge and GeSn thinfilms is investigated on glass substrates. By Raman measurement, we have found that crystallinity of GeSn films shows dependence on laser energy, while that of Ge films doesn’t. Detail physics will be discussed in the presentation.