The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

9 Applied Materials Science » 9.3 Nanoelectronics

[12p-W934-1~10] 9.3 Nanoelectronics

Tue. Mar 12, 2019 1:15 PM - 4:00 PM W934 (W934)

Hirofumi Tanaka(Kyushu Inst. of Tech.), Yasuhisa Naitoh(AIST)

3:00 PM - 3:15 PM

[12p-W934-7] Analysis of periodic Coulomb oscillation characteristics of single-electron transistor
composed of Fe-MgF2 single layered granular film

Takayuki Gyakushi1, Yuki Asai1, Atsushi Fukuchi1, Masashi Arita1, Yasuo Takahashi1 (1.Graduate school of IST.,Hokkaido univ.)

Keywords:Single-electron transitor, Nano dot, Coulomb oscillation

Single electron transistors(SETs) composed of nanometer-scale nanodots have been attracted because of their potential to show very low-power consumption with high functionality. We fabricated SETs composed of Fe-MgF2 single layered granular films, which Fe nanodots are dispersed in MgF2 matrix. We found the fact that although there are more hundreds of Fe nanodots in the granular film, periodic oscillation was observed when the Fe film thickness was around percolation threshold. In this study, detail analysis of the periodic coulomb oscillation characteristics based on orthodox theory was performed. The analysis showed the fact that a single nanodot predominated the oscillation even though the thousands of nanodots are predicted.