Poster presentation

[11p-PA8-1~5] 9.3 Nanoelectronics

Mon. Mar 11, 2019 4:00 PM - 6:00 PM PA8 (PA)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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4:00 PM - 6:00 PM

[11p-PA8-1] Comparison of Dispersion energies of common-gate and non-common-gate single-electron turnstiles

〇Mika Yasuda¹, Shigeru Imai¹ (1.Ritsumeikan Univ.)

4:00 PM - 6:00 PM

[11p-PA8-2] Analysis of stability regions of single-common-gate triple-dot single-electron devices with asymmetric gate capacitances

〇Yusuke Watanabe¹, Shigeru Imai¹ (1.Ritsumeikan Univ.)

4:00 PM - 6:00 PM

[11p-PA8-3] Design of bubble-inspired single electron device mimicking behavior of bubble film

〇Nobuhiko Kurata¹, Takahide Oya¹ (1.Yokohama National Univ.)

4:00 PM - 6:00 PM

[11p-PA8-4] Statistical Survey of Gold Nanoparticle Arrays Assembled by Dielectrophoresis Aimed at Single-Electron Device Application

〇Makoto Moribayashi¹, Tomoki Yagai¹, Masataka Moriya¹, Hiroshi Shimada¹, Ayumi Hirano-Iwata², Fumihiko Hirose³, Yoshinao Mizugaki¹ (1.UEC Tokyo, 2.Tohoku Univ., 3.Yamagata Univ.)

4:00 PM - 6:00 PM

▼ [11p-PA8-5] Modulation of the resistance switching behavior of Ag₂S-based switches using graphene oxide layer

〇(B)Bruno Kenichi Saika¹, Ryota Negishi¹, Yoshihiro Kobayashi¹ (1.Osaka University)

Oral presentation

[12a-W934-1~9] 9.3 Nanoelectronics

Tue. Mar 12, 2019 9:15 AM - 11:45 AM W934 (W934)

Takahide Oya(Yokohama National Univ.), Katsuhiko Nishiguchi(NTT)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:15 AM - 9:30 AM

[12a-W934-1] Study on Ultrashort Pulse Response of Single-Electron Transistor

〇(M1)Tomoki Nishimura¹, Alka Singh¹, Yasuki Kimura¹, Hiroaki Satoh², Hiroshi Inokawa² (1.GSIST, Shizuoka Univ., 2.RIE, Shizuoka Univ.)

9:30 AM - 9:45 AM

[12a-W934-2] periodicity of condition for pumping operation in common-gate triple-dot single-electron devices with high asymmetry

〇Shunta Sakai¹, Shigeru Imai¹ (1.Ritsumei Univ.)

9:45 AM - 10:00 AM

[12a-W934-3] Design of new single-electron information-processing circuit mimicking behavior of fish shoal

〇Hideto Yamashita¹, Takahide Oya¹ (1.Yokohama National Univ)

10:00 AM - 10:15 AM

[12a-W934-4] Design of single-electron neural network with learning function circuit

〇Masaki Ueno¹, Takahide Oya¹ (1.Yokohama National Univ.)

10:15 AM - 10:30 AM

[12a-W934-5] Design of thermal-noise-harnessing single-electron memory pair circuit and its application to majority logic gate

〇Risa Kaide¹, Takahide Oya¹ (1.Yokohama National Univ.)

10:45 AM - 11:00 AM

[12a-W934-6] Simulated Quantum Annealing for Solving Combinatorial Optimization Problems with 2D Ising Machines

〇Moe Shimada¹, Mitsuki Ito¹, Yosuke Hirata¹, Tsukasa Miki¹, Jun-ichi Shirakashi¹ (1.Tokyo Univ. Agr. & Tech.)

11:00 AM - 11:15 AM

[12a-W934-7] Ising Computing with High-Resolution Bit Connection for Solving Combinatorial Optimization Problems

〇Tsukasa Miki¹, Mitsuki Ito¹, Yosuke Hirata¹, Moe Shimada¹, Jun-ichi Shirakashi¹ (1.Tokyo Univ. Agr. & Tech.)

11:15 AM - 11:30 AM

[12a-W934-8] Control for Quantized Conductance Using Optimized Parameters Obtained by Ising Computing Implemented on FPGA

〇Yosuke Hirata¹, Takuya Sakurai¹, Keita Takebayashi¹, Shotaro Sakai¹, Jun-ichi Shirakashi¹ (1.Tokyo Univ. Agr. & Tech.)

11:30 AM - 11:45 AM

[12a-W934-9] Fabrication of Au Atomic Junctions Using Genetic Algorithm Implemented on FPGA

〇Keita Takebayashi¹, Takuya Sakurai¹, Yosuke Hirata¹, Yuma Iwata¹, Jun-ichi Shirakashi¹ (1.Tokyo Univ. Agr. & Tech.)

Oral presentation

[12p-W934-1~10] 9.3 Nanoelectronics

Tue. Mar 12, 2019 1:15 PM - 4:00 PM W934 (W934)

Hirofumi Tanaka(Kyushu Inst. of Tech.), Yasuhisa Naitoh(AIST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:15 PM - 1:30 PM

[12p-W934-1] Ligand Structure Dependence on Chemically Assembled Au Nanoparticle Single-Electron Transistor

〇Yuta Nishizaki¹, Younsu Jung¹, Seoungjoo Lee¹, Pipit Uky Vivitasari¹, Yoon Young Choi¹, Masanori Sakamoto², Toshiharu Teranishi², Yutaka Majima¹ (1.Tokyo Tech., 2.Kyoto Univ.)

1:30 PM - 1:45 PM

[12p-W934-2] Single-Molecular Resonant Tunneling Transistor Based on Carbon-Bridged Oligo-Phenylene Vinylene 6

〇Rikiya Irie¹, Chun Ouyang¹, Yuma Itou¹, Kouhei Hashimoto², Hayato Tsuji³, Eiichi Nakamura², Yutaka Majima¹ (1.Tokyo Tech., 2.Tokyo Univ., 3.Kanagawa Univ.)

1:45 PM - 2:00 PM

▼ [12p-W934-3] Single Molecular Resonant-Tunneling Transistor (SMRT²) based on Quinoidal Fused Oligosilole Derivative (Si-2*2) bridged between H-ELGP Pt-based Nanogap Electrodes

〇(D)SeungJoo Lee¹, Jaeyeon Kim¹, Tomohiro Tsuda², Ryo Shintani², Kyoko Nozaki³, Yutaka Majima¹ (1.Tokyo Institute of Technology, 2.Osaka University, 3.University of Tokyo)

2:00 PM - 2:15 PM

[12p-W934-4] Molecular transistor based on simple π-conjugated derivative

〇(B)Genki Ohkatsu¹, Hayato Tuji², Yutaka Majima¹ (1.Tokyo Tech., 2.Knagawa Univ.)

2:15 PM - 2:30 PM

[12p-W934-5] Investigation of molecular bridging method controlled using field migration of metal atoms on nanogap electrodes

〇Yasuhisa Naitoh¹, Yosuke Tani², Emiko Koyama¹, Tohru Nakamura¹, Tohru Sumiya¹, Takuji Ogawa² (1.AIST, 2.Osaka Univ.)

2:30 PM - 2:45 PM

[12p-W934-6] Single-Electron Tunneling Effects in Electromigrated Coulomb Islands in Au Nanogaps

〇Soki Tani¹, Koji Minami¹, Keita Sakai¹, Tomomi Sato¹, Moe Shimada¹, Mitsuki Ito¹, Mamiko Yagi², Jun-ichi Shirakashi¹ (1.Tokyo Univ. Agr. & Tech., 2.NIT, Ichinoseki College)

3:00 PM - 3:15 PM

△ [12p-W934-7] Analysis of periodic Coulomb oscillation characteristics of single-electron transistor
composed of Fe-MgF₂ single layered granular film

〇Takayuki Gyakushi¹, Yuki Asai¹, Atsushi Fukuchi¹, Masashi Arita¹, Yasuo Takahashi¹ (1.Graduate school of IST.,Hokkaido univ.)

3:15 PM - 3:30 PM

△ [12p-W934-8] Effect of cavity structure for Spindt-type emitter fabrication by using HPPMS

〇Hyuga Taniguchi¹, Takeo Nakano¹, Kei Oya¹, Masayoshi Nagao², Hisashi Ohsaki², Katsuhisa Murakami² (1.Seikei Univ., 2.AIST.)

3:30 PM - 3:45 PM

[12p-W934-9] Formation and characterization of resist collapse random pattern for nano-artifact-metrics

〇Renpeng Lu¹, Katsumi Shimizu¹, Xiang Yin¹, Yosuke Ueba², Mikio Ishikawa², Mitsuru Kitamura², Seiya Kasai¹ (1.Hokkaido Univ., 2.Dai Nippon Printing Co., Ltd.)

3:45 PM - 4:00 PM

▲ [12p-W934-10] Short-term and long-term memory of random aggregation device using Ag-Ag₂S nanoparticles

〇(D)Hadiyawarman Hadiyawarman¹, Masanori Eguchi², Hirofumi Tanaka¹ (1.Kyushu Inst. of Tech., 2.Kure Nat. Col. of Tech.)

Sessions

9 Applied Materials Science » 9.3 Nanoelectronics

[11p-PA8-1~5] 9.3 Nanoelectronics

[11p-PA8-1] Comparison of Dispersion energies of common-gate and non-common-gate single-electron turnstiles

[11p-PA8-2] Analysis of stability regions of single-common-gate triple-dot single-electron devices with asymmetric gate capacitances

[11p-PA8-3] Design of bubble-inspired single electron device mimicking behavior of bubble film

[11p-PA8-4] Statistical Survey of Gold Nanoparticle Arrays Assembled by Dielectrophoresis Aimed at Single-Electron Device Application

▼ [11p-PA8-5] Modulation of the resistance switching behavior of Ag₂S-based switches using graphene oxide layer

[12a-W934-1~9] 9.3 Nanoelectronics

[12a-W934-1] Study on Ultrashort Pulse Response of Single-Electron Transistor

[12a-W934-2] periodicity of condition for pumping operation in common-gate triple-dot single-electron devices with high asymmetry

[12a-W934-3] Design of new single-electron information-processing circuit mimicking behavior of fish shoal

[12a-W934-4] Design of single-electron neural network with learning function circuit

[12a-W934-5] Design of thermal-noise-harnessing single-electron memory pair circuit and its application to majority logic gate

[12a-W934-6] Simulated Quantum Annealing for Solving Combinatorial Optimization Problems with 2D Ising Machines

[12a-W934-7] Ising Computing with High-Resolution Bit Connection for Solving Combinatorial Optimization Problems

[12a-W934-8] Control for Quantized Conductance Using Optimized Parameters Obtained by Ising Computing Implemented on FPGA

[12a-W934-9] Fabrication of Au Atomic Junctions Using Genetic Algorithm Implemented on FPGA

[12p-W934-1~10] 9.3 Nanoelectronics

[12p-W934-1] Ligand Structure Dependence on Chemically Assembled Au Nanoparticle Single-Electron Transistor

[12p-W934-2] Single-Molecular Resonant Tunneling Transistor Based on Carbon-Bridged Oligo-Phenylene Vinylene 6

▼ [12p-W934-3] Single Molecular Resonant-Tunneling Transistor (SMRT²) based on Quinoidal Fused Oligosilole Derivative (Si-2*2) bridged between H-ELGP Pt-based Nanogap Electrodes

[12p-W934-4] Molecular transistor based on simple π-conjugated derivative

[12p-W934-5] Investigation of molecular bridging method controlled using field migration of metal atoms on nanogap electrodes

[12p-W934-6] Single-Electron Tunneling Effects in Electromigrated Coulomb Islands in Au Nanogaps

△ [12p-W934-7] Analysis of periodic Coulomb oscillation characteristics of single-electron transistor
composed of Fe-MgF₂ single layered granular film

△ [12p-W934-8] Effect of cavity structure for Spindt-type emitter fabrication by using HPPMS

[12p-W934-9] Formation and characterization of resist collapse random pattern for nano-artifact-metrics

▲ [12p-W934-10] Short-term and long-term memory of random aggregation device using Ag-Ag₂S nanoparticles

Authentication

Sessions

9 Applied Materials Science » 9.3 Nanoelectronics

[11p-PA8-1~5] 9.3 Nanoelectronics

▼ [11p-PA8-5] Modulation of the resistance switching behavior of Ag2S-based switches using graphene oxide layer

[12a-W934-1~9] 9.3 Nanoelectronics

[12p-W934-1~10] 9.3 Nanoelectronics

▼ [12p-W934-3] Single Molecular Resonant-Tunneling Transistor (SMRT2) based on Quinoidal Fused Oligosilole Derivative (Si-2*2) bridged between H-ELGP Pt-based Nanogap Electrodes

△ [12p-W934-7] Analysis of periodic Coulomb oscillation characteristics of single-electron transistorcomposed of Fe-MgF2 single layered granular film

△ [12p-W934-8] Effect of cavity structure for Spindt-type emitter fabrication by using HPPMS

▲ [12p-W934-10] Short-term and long-term memory of random aggregation device using Ag-Ag2S nanoparticles

Authentication

▼ [11p-PA8-5] Modulation of the resistance switching behavior of Ag₂S-based switches using graphene oxide layer

▼ [12p-W934-3] Single Molecular Resonant-Tunneling Transistor (SMRT²) based on Quinoidal Fused Oligosilole Derivative (Si-2*2) bridged between H-ELGP Pt-based Nanogap Electrodes

△ [12p-W934-7] Analysis of periodic Coulomb oscillation characteristics of single-electron transistor
composed of Fe-MgF₂ single layered granular film

▲ [12p-W934-10] Short-term and long-term memory of random aggregation device using Ag-Ag₂S nanoparticles