[12p-W934-1~10] 9.3 Nanoelectronics

[12p-W934-9] Formation and characterization of resist collapse random pattern for nano-artifact-metrics

〇Renpeng Lu¹, Katsumi Shimizu¹, Xiang Yin¹, Yosuke Ueba², Mikio Ishikawa², Mitsuru Kitamura², Seiya Kasai¹ (1.Hokkaido Univ., 2.Dai Nippon Printing Co., Ltd.)

Keywords:nano-artifact-metrics, resist collapse pattern

Artificial metrics are authentication methods that utilize the physical characteristics of artifacts. In recent years, nano-artificial-metrics using resist collapse patterns are attracting attention as an authentication technique with high clone resistance. We proposed an electrical identification method with MOSFET embedded with nano-structure as a simple structure identification method and demonstrated by device simulation. In this report, we investigated the relation between random pattern formation condition and randomness of resist collapse on Si substrate for experimental demonstration of electrical identification.