[12p-W934-1~10] 9.3 Nanoelectronics

△ [12p-W934-8] Effect of cavity structure for Spindt-type emitter fabrication by using HPPMS

〇Hyuga Taniguchi¹, Takeo Nakano¹, Kei Oya¹, Masayoshi Nagao², Hisashi Ohsaki², Katsuhisa Murakami² (1.Seikei Univ., 2.AIST.)

Keywords:sputtering, Spindt-type emitter

In the fabrication process of Spindt-type emitters, cavity structures with a hole on their ceiling are prepared, and an emitter material is deposited to form cone shaped cathodes inside of the cavities. We have tried to deposit Mo, a suitable refractory material for emitter cathode, by using high power pulsed magnetron sputtering technique and determined the optimum condition to form the sharpest emitter cathode shape. However, in those deposition conditions, the deposited films had strong compressive stress which frequently resulted in the delamination of films as well as the deformation of the cavities. In this study, we attempted another approach to fabricate the sharp cathode structure: to change the structure of the cavity. It was found that the larger hole diameter and the shallower cavity depth, the sharper emitter could be fabricated. With these results, it is expected to fabricate a sharp cathode enough to work with a practical emitter within the conditions where the films does not delaminate.