[9a-M121-1~11] 13.7 Compound and power electron devices and process technology

△ [9a-M121-10] Identification of a compensating acceptor in quartz-free-HVPE grown n-type GaN layers

〇Kazutaka Kanegae¹, Hajime Fujikura², Yohei Otoki², Taichiro Konno², Takehiro Yoshida², Masahiro Horita^1,3,4, Tsunenobu Kimoto¹, Jun Suda^1,3,4 (1.Kyoto Univ., 2.SCIOCS Co., Ltd., 3.Nagoya Univ. IMaSS, 4.Nagoya Univ.)

Keywords:GaN, deep level, compensating acceptor

The quartz-free-HVPE (QF-HVPE) method has attracted a lot of attention for an epitaxial growth of drift layer for GaN vertical power devices. The QF-HVPE method which has a high growth rate involves the use of carbon-free raw materials. In this study, it was shown that a compensating acceptor is the H1 trap (carbon related defect) via detail characterization of the impurity and carrier trap concentrations in QF-HVPE grown Si-doped n-type GaN layers with the doping concentration of 10¹⁵ cm^-3.