[9a-M121-1~11] 13.7 Compound and power electron devices and process technology

[9a-M121-4] Impact of Forming Gas Annealing on Electrical Properties of SiO₂/GaN MOS Devices

〇Takahiro Yamada¹, Yuhei Wada¹, Daiki Terashima¹, Mikito Nozaki¹, Katsunori Ueno², Shinya Takashima², Hisashi Yamada³, Tokio Takahashi³, Mitsuaki Shimizu³, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.Fuji Electric, 3.AIST)

Keywords:GaN, Forming gas annealing, SiO2