The 66th JSAP Spring Meeting, 2019

Presentation information

Poster presentation

9 Applied Materials Science » 9.4 Thermoelectric conversion

[9a-PA1-1~13] 9.4 Thermoelectric conversion

Sat. Mar 9, 2019 9:30 AM - 11:30 AM PA1 (PA)

9:30 AM - 11:30 AM

[9a-PA1-12] Electronic structure modification of BaSbxSn1-xO3 materials thermoelectric application

〇(D)Rajasekaran Palani1, Yuki Kumaki1, Arivanandhan Mukannan2, Jayavel Ramasamy2, Masaru Shimomura1 (1.Shizuoka University, 2.Anna University)

Keywords:Thermoelectric, Band Structure

Thermoelectric technique is alternate approach of utilizing waste thermal energy and converts into electrical energy at low cost. In this research BaSbxSn1-xO3 perovskite materials were prepared by polymerization complex method. XRD pattern analysis of the samples show the cubic structure. Morphological images measured by SEM and TEM show the microstructure of the interconnected cubic particles. The band structures of the BaSbxSn1-xO3 were calculated using 3×3×3 super cell. In the calculated BaSnO3 band structure, valance band maximum is located below the Fermi level. After substitution of Sb atom into the Sn site, Fermi energy level is shifted towards the Sn-5s band. From the XPS analysis, Sb5+ ions only exist and no Sb3+ ions were detected. Hall electrical conductivity measurement showed donor type semiconducting property. Seebeck coefficient was -60 μV/K for the BaSb0.010Sn0.990O3 sample and the resistivity was low at the higher temperature. The power factor of 2.1 μW/mK2 was measured BaSb0.010Sn0.990O3 sample. The room temperature thermal conductivity showed 1.05 W/mK in both samples. In higher temperature, thermal conductivity was reduced and BaSb0.005Sn0.995O3 for 0.595 W/mK and BaSb0.010Sn0.990O3 for 0.631 W/mK were measured. The thermoelectric figure of merit ZT-0.028 was achieved with the BaSb0.010Sn0.990O3 sample at 819 K.