[9a-PB2-1~9] 3.15 Silicon photonics

[9a-PB2-6] Template thickness dependence on I-L characteristics in GaInAsP/GaInAsP MQW laser diode grown on directly bonded InP/Si substrate

〇Takuto Shirai¹, Natsuki Hayasaka¹, Masaki Aikawa¹, Xu Han¹, Hirokazu Sugiyama¹, Kazuki Uchida¹, Masaki Matsuura¹, Takahiro Ishizaki¹, Koki Tsushima¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

Keywords:laser diode, InP/Si, Direct Bonding