[9a-PB3-1~18] 15.6 Group IV Compound Semiconductors (SiC)

[9a-PB3-14] Development of high blocking voltage 4H-SiC Schottky-pn diode

〇Kazutoshi Kojima¹, Hajime Okumura¹ (1.AIST)

Keywords:4H-SiC, Schottky-pn junction, on resistance

The Schottky-pn diode (SPND) which has a fully depleted low doped layer sandwiched between schottky junction and pn one shows lower on resistance than that of conventional diodes because only electron or hole moves the depleted layer on forward bias. In addition, higher switching operation will be expected without a minority carrier injection despite having the PN junction. These characteristics were confirmed by SPIND with Diamond or 4H-SiC. In this study, we fabricated high blocking voltage 4H-SiC SPNDs and tried to take balance between low on resistance and high blocking voltage characteristics.