Characterization of Electron Emission Current of Graphene-Oxide-Semiconductor Planar-Type Electron Sources for Miniature Ion Engines

Ryo Furuya; Katsuhisa Murakami; Masayoshi Nagao; Yoshinori Takao

Presentation information

Oral presentation

7 Beam Technology and Nanofabrication » 7.2 Applications and technologies of electron beams

[9a-S223-1~9] 7.2 Applications and technologies of electron beams

Sat. Mar 9, 2019 9:30 AM - 12:00 PM S223 (S223)

Mitsunori Kitta(AIST), Takashi Kawakubo(Ntl. Intst. of Tech., Kagawa College)

11:15 AM - 11:30 AM

△ [9a-S223-7] Characterization of Electron Emission Current of Graphene-Oxide-Semiconductor Planar-Type Electron Sources for Miniature Ion Engines

〇(M1)Ryo Furuya^1,2, Katsuhisa Murakami², Masayoshi Nagao², Yoshinori Takao¹ (1.YNU, 2.AIST)

Keywords:graphene, electron emission device, ion engine

Planar-type electron emission sources based on a graphene-oxide-semiconductor structure can be driven by applying the gate bias of 10-20 V with a high electron emission density of 1–100 mA/cm². However, their electron emission current is much lower than that of conventional neutralizer of miniature ion thrusters. Therefore, we tried to increase the emission current by decreasing a sheet resistance of graphene layers.