[9a-S421-1~12] 12.7 Biomedical Engineering and Biochips

[9a-S421-12] Fabrication of High-Sensitivity Silicon Nanowire Biosensor by Electron Beam Lithography and Detection of Antigen-Antibody Specific Binding at Attomolar Concentration

〇Hui Zhang^1,2, Noriyasu Ohshima³, Kakeru Oshima¹, Naoki Kikuchi¹, Taira Kajisa⁴, Toshiya Sakata⁵, Takashi Izumi³, Hayato Sone¹ (1.Gunma Univ., 2.JSPS PD, 3.Gunma Univ.,, 4.PROVIGATE Inc., 5.The Univ. of Tokyo)

Keywords:Silicon Nanowire Biosensor, Electron Beam Lithography, Antigen-Antibody Specific Binding

A simple top-down fabrication process of silicon nanowire (SiNW) biosensor by electron beam lithography was investigated. To achieve ultra-sensitive detection of attomolar (aM) level, several crucial parameters of the biosensor were optimized, for instance, controlling impurity doping concentration, miniaturizing SiNW width, functionalizing SiNW surface using 2-aminoethylphosphonic acid coupling. On the basis of precise process control, SiNW with width of 16.2 nm was successfully fabricated. The performance of the SiNW biosensor was evaluated through detecting antigen-antibody specific binding. It was demonstrated that the SiNW biosensor has the ability to detect specific biomolecules with concentration of 6 aM. The limit of detection was over 300 times higher than that of the current reported SiNW biosensors.