[9a-S422-1~13] 15.1 Bulk crystal growth

[9a-S422-13] Growth, processing and evaluation of Ni crystal of 100mm in diameter using CZ method

〇Takashi Fujii^1,2, Watanabe Kiyokazu¹, Takahashi Kazuya¹, Kumagai Tsuyoshi¹, Fukuda Tsuguo¹, Matsuoka Takashi³, Kwamata Tooru³, Sugiyama Kazumasa³ (1.Fukuda Cryst. Lab., 2.Katsura opt., 3.IMR)

Keywords:Ni crystal, CZ method, GaN

Ni shingle crystal is attractive materials for the substrate of GaN epitaxial layer and grpehene. However, it was difficult to grow the Ni crystal by CZ method, because Ni was high density and the malleable material in high temperature condition. We have grown the Ni single crystals in 50mm and 100mm in diameter using CZ method. Furthermore, we have developed the processing technology of Ni wafer with a low defect.