[9a-S422-1~13] 15.1 Bulk crystal growth

△ [9a-S422-7] The effect of Ga/Al ratio on the melt structure and crystal growth of Ca₃Ta(Ga,Al)₃Si₂O₁₄

〇(M2)Yuki Honda¹, Hiromasa Niinomi¹, Jun Nozawa¹, Junpei Okada¹, Satoshi Uda¹ (1.IMR, Tohoku Univ.)

Keywords:crystal growth, melt, liquid immiscibility

It is proved that the melt of the langasite type crystal Ca₃Ta(Ga,Al)₃Si₂O₁₄(CTGAS) has an immiscible structure. When melting the CTGAS raw material with the Ga/Al ratio changed and solidifying rapidly, the second phase and the third phase exist other than CTGAS, and the Ga/Al ratio became equal among the three phases. As the amount of Al increased, the amount of CTGAS decreased and the amounts of the second phase and the third phase increased. In the crystallization from the CTGAS melt, quantitative change among the three phases could not be explained. It is considered that there could exist two melts, a melt that forming CTGAS and a melt that forming the second phase and the third phase.