[9a-W611-1~8] 16.3 Bulk, thin-film and other silicon-based solar cells

▼ [9a-W611-6] Study on interface recombination characteristics of crystalline-silicon/organic heterojunction solar cells

〇(DC)ATM Saiful Islam¹, Yuki Nasuno¹, Daisuke Harada¹, Ryo Ishikawa¹, Keiji UENO¹, Hajime Shirai¹ (1.Saitama University)

Keywords:Recovery time, Recombination velocity, Minority carrier

We have investigated the effect of interface recombination characteristics at the front- and rear-Si interface by reverse recovery study of PEDOT:PSS/n-Si/SnO₂(TiO₂) junction solar cells to understand the recombination velocity. We have found that, for PEDOT:PSS/n-Si junction solar cells the reverse charge storage time (~5.5µs) for the minority carrier is almost independent of the reverse recovery current. This can help to understand the effect of front-electron and rear-hole blocking layers on surface recombination velocity.