[9p-M103-1~16] 2.3 Application, radiation generators, new technology

[9p-M103-4] The response to irradiation with power semiconductor device

〇Makoto Sasano¹, Masateru Hayashi¹, Tetsushi Azuma¹, Yoshitsugu Sawa¹ (1.Mitsubishi Electric co.)

Keywords:semiconductor, MOSFET

The environmental radiation cause errors or damages for semiconductor devices. Recently, semiconductor devices for the electric power control are widely distributed for mobilities like trains and cars etc.. In this study, we measured distributions of charges which are caused by the radiation travel in such a power semiconductor devices. In addition to the measurement, we compared the measurement result with a simulation using Geant4 and confirmed that the result was consistent with the simulation. In this time, we will report those results.