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[9p-PA2-12] Investigation of photopolymerization initiator to polymerize PSQ gate dielectric layers for organic thin film transistor
Keywords:Organic Thin Film Transistor, polysilsesquioxane, Photopolymerization initiator
In this study, application of polysilsesquioxane (PSQ) film polymerized by irradiation of ultravaiolet light to gate insulating films of organic thin film transistor.
we investigated the photopolymerization initiator and attempted to shorten the polymerization time of the PSQ gate insulating film to shorter than 30 minutes . With the photopolymerization initiator used this time, the UV polymerization time was shortened to 5 minutes, and the pentacene transistor using the gate insulating film showed relatively high carrier mobility.
we investigated the photopolymerization initiator and attempted to shorten the polymerization time of the PSQ gate insulating film to shorter than 30 minutes . With the photopolymerization initiator used this time, the UV polymerization time was shortened to 5 minutes, and the pentacene transistor using the gate insulating film showed relatively high carrier mobility.