The 66th JSAP Spring Meeting, 2019

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Poster presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[9p-PA4-1~30] 6.3 Oxide electronics

Sat. Mar 9, 2019 4:00 PM - 6:00 PM PA4 (PA)

4:00 PM - 6:00 PM

[9p-PA4-14] Comparative study on Resistive Switching Memory Device using Ta2O5 and HfO2 by wet process

〇Hidekazu Komaki1, Taisuke Saigo1, Takahiko Ban1, Shin-ichi Yamamoto1 (1.Ryukoku Univ.)

Keywords:resistive switching