[9p-PA4-1~30] 6.3 Oxide electronics

[9p-PA4-9] Thin-film growth and conductivity control of layered p-type semiconductor LiRhO₂

〇(DC)Takuto Soma¹, Kohei Yoshimatsu¹, Akira Ohtomo^1,2 (1.Tokyo Tech., Dept. Chem. Sci. Eng., 2.MCES)

Keywords:p-type semiconductor, Metal-insulator transiton, Intercalation

Group 9 element Rh takes +3 valence in various compounds and its electronic configuration is 4d⁶. Taking low-spin state in the octahedral crystal field, t_2g orbital is completely closed. Thus, such compounds typified by Rh₂O₃ become an insulator. However, by hole-doping, it becomes a p-type semiconductor. Considering that hole conduction is effective for conductivity enhancement, we focused on LiRhO₂ which has layered rock-salt structure. Although LiRhO₂ has been known for a long time, its electronic properties have been rarely studied. Therefore, in this research, we tried to synthesis of high quality thin film and evaluation of electric conductivity.