[9p-PB1-1~80] 10 スピントロニクス・マグネティクス（ポスター講演）

▲ [9p-PB1-69] Voltage control of magnetic anisotropy in Mn inserted Magnetic tunnel junction

〇(M1)Tsubasa Watakabe¹、Goto MInori¹、Miwa Shinji²、Suzuki Yoshishige^1,3 (1.Osaka Univ.、2.Univ. of Tokyo、3.CSRN-Osaka)

キーワード：Voltage controlled of magnetic anisotropy

To realize the low energy consumption magnetic memory which employs tunnel magnetoresistance (TMR) effect, it is essential to control the direction of magnetization efficiently. Voltage controlled magnetic anisotropy (VCMA) has recently been attracting much attention as low power consumption technique because it doesn’t require the electric current. In this research, we have characterized the voltage induced magnetic anisotropy of Fe|Mn|MgO multilayer.