[9p-PB6-1~15] 16.3 Bulk, thin-film and other silicon-based solar cells

[9p-PB6-9] Effect of post deposition annealing on GaO_x film deposited by mist CVD Method

〇Hiroaki Matsuda¹, Hidenobu Mori¹, Koji Arafune¹, Shiniti Satoh¹, Haruhiko Yoshida¹ (1.Univ. of Hyogo)

Keywords:mist CVD method, solar cell, passivation

The GaO_x film formed by the mist CVD method was subjected to hydrogen annealing and the electric characteristics were evaluated.