The 66th JSAP Spring Meeting, 2019

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-S011-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sat. Mar 9, 2019 1:45 PM - 5:15 PM S011 (South Lecture Bldg.)

Yukiharu Uraoka(NAIST), Takayoshi Oshima(Saga Univ.)

4:30 PM - 4:45 PM

[9p-S011-11] Synchrotron X-ray Topography Observation of Defects in vertical Bridgman-grown β-Ga2O3 Single Crystal

〇Satoshi Masuya1, Kohei Sasaki2,3, Akito Kuramata2,3, Takumi Kobayashi4, Keigo Hoshikawa5, Osamu Ueda6, Makoto Kasu1 (1.Saga Univ., 2.Novel Crystal Tech., 3.Tamura Corp., 4.Fujikoshi Machinery Corp., 5.Shinshu Univ., 6.Kanazawa Inst. Tech.)

Keywords:Gallium Oxide, X-ray topography