Satoshi Masuya

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Speaker, Author, Co-Author

Sat. Mar 9, 2019 1:45 PM - 5:15 PM S011 (South Lecture Bldg.)

Oral presentation
| 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices"
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-S011-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

4:30 PM - 4:45 PM

[9p-S011-11] Synchrotron X-ray Topography Observation of Defects in vertical Bridgman-grown β-Ga₂O₃Single Crystal

〇Satoshi Masuya¹, Kohei Sasaki^2,3, Akito Kuramata^2,3, Takumi Kobayashi⁴, Keigo Hoshikawa⁵, Osamu Ueda⁶, Makoto Kasu¹ (1.Saga Univ., 2.Novel Crystal Tech., 3.Tamura Corp., 4.Fujikoshi Machinery Corp., 5.Shinshu Univ., 6.Kanazawa Inst. Tech.)