The 66th JSAP Spring Meeting, 2019

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-S011-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sat. Mar 9, 2019 1:45 PM - 5:15 PM S011 (South Lecture Bldg.)

Yukiharu Uraoka(NAIST), Takayoshi Oshima(Saga Univ.)

2:15 PM - 2:30 PM

[9p-S011-3] Structural analysis and FET characteristics of crystalline IGZO films

〇Toshimitsu Obonai1, Yasuharu Hosaka1, Kenichi Okazaki1, Shunpei Yamazaki1 (1.SEL)

Keywords:oxide semiconductor, IGZO, nano- crystalline

We previously reported that at least nanometer-order crystals are observed in sputter-deposited IGZO films by a nanobeam electron diffraction (NBED) analysis. In this study, we performed an NBED analysis on IGZO films deposited under different conditions for crystallinity evaluation. The analysis revealed that different deposition conditions result in a difference in spots in the NBED patterns. The crystallinity differences between those IGZO films and FET characteristics will be reported at the meeting.