[9p-S221-1~15] 13.5 デバイス／配線／集積化技術

▼ [9p-S221-6] Steep Slope (<60mV/dec) and Hysteresis Characteristics in Junctionless SOI Transistors
at Low Drain Voltage of 50mV

〇(D)Minju Ahn¹、Kiyoshi Takeuchi¹、Takuya Saraya¹、Masaharu Kobayashi¹、Toshiro Hiramoto¹ (1.Institute of Industrial Science, University of Tokyo)

キーワード：Junctionless, Steep subthreshold slope

In this paper, we report steep subthreshold slope (SS) below 60mV/dec in junctionless SOI transistor at low drain voltage of 50mV, where the impact ionization (II) is negligible. The relationships among SS, drain voltage, hysteresis and scanning speed are shown and the origin of steep SS is discussed.