The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

15 Crystal Engineering » 15.1 Bulk crystal growth

[9p-S422-1~13] 15.1 Bulk crystal growth

Sat. Mar 9, 2019 1:30 PM - 6:00 PM S422 (S422)

Kei Kamada(Tohoku Univ.), Yuui Yokota(Tohoku Univ.)

5:15 PM - 5:30 PM

[9p-S422-11] Demonstration of High-Speed Growth of φ4 inch Thick 4H-SiC Single Crystals by High Temperature Chemical Vapor Deposition (HTCVD) Method

Yuichiro Tokuda1, Hironari Kuno1, Hideyuki Uehigashi1, Takeshi Okamoto1, Takahiro Kanda1, Nobuyuki Ohya1, Norihiro Hoshino2, Isaho Kamata2, Hidekazu Tsuchida2 (1.DENSO CORPORATION, 2.CRIEPI)

Keywords:silicon carbide, crystal growth, HTCVD growth

We have been developing high temperature chemical vapor deposition (HTCVD) method for realization of low cost and high throughput growth technique of high quality 4H-SiC bulk crystals. Influence of process condition on growth rate was investigated by crystal growth simulation. Based on the simulation, we designed the reactor and process window for the optimized reactor was studied by crystal growth experiment. Finally, we conducted 10 h crystal growth at optimized condition. As a result,φ4 inches x 20 mm 4H-SiC crystal growth at high-speed of 2 mm/h was demonstrated.