Yuichiro Tokuda

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Speaker, Author, Co-Author

Sat. Mar 9, 2019 1:30 PM - 6:00 PM S422 (S422)

Oral presentation
| 15 Crystal Engineering
| 15.1 Bulk crystal growth

[9p-S422-1~13] 15.1 Bulk crystal growth

5:15 PM - 5:30 PM

[9p-S422-11] Demonstration of High-Speed Growth of φ4 inch Thick 4H-SiC Single Crystals by High Temperature Chemical Vapor Deposition (HTCVD) Method

〇Yuichiro Tokuda¹, Hironari Kuno¹, Hideyuki Uehigashi¹, Takeshi Okamoto¹, Takahiro Kanda¹, Nobuyuki Ohya¹, Norihiro Hoshino², Isaho Kamata², Hidekazu Tsuchida² (1.DENSO CORPORATION, 2.CRIEPI)

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