[9p-S422-1~13] 15.1 Bulk crystal growth

[9p-S422-4] Observation of Point Defect Distributions in Detached CZ Si Crystals from Melt (2) -Distributions of Interstitials during Cooling Process in Growing Crystals-

〇Takao Abe¹, Toru Takahashi¹, Koun Shirai² (1.Shin-Etsu Handotai, 2.ISIR, Osaka Univ.)

Keywords:Si melt growth, point defects, Interstitial generation