Control of B concentration in silicon-germanium crystal growth by TLZ technique

Koyuki Kawakami; Koji Ogawa; Rika Kikuchi; Yasutomo Arai; Toshinori Taishi

Presentation information

Oral presentation

15 Crystal Engineering » 15.1 Bulk crystal growth

[9p-S422-1~13] 15.1 Bulk crystal growth

Sat. Mar 9, 2019 1:30 PM - 6:00 PM S422 (S422)

Kei Kamada(Tohoku Univ.), Yuui Yokota(Tohoku Univ.)

3:30 PM - 3:45 PM

[9p-S422-5] Control of B concentration in silicon-germanium crystal growth by TLZ technique

Koyuki Kawakami¹, Koji Ogawa¹, Rika Kikuchi¹, Yasutomo Arai², 〇Toshinori Taishi¹ (1.Shinshu Univ., 2.JAXA)

Keywords:silicon germanium, segregation of impurity, TLZ technique

We investigated the control of boron concentration in silicon germanium (Si_xGe_1-x) crystals grown by TLZ technique, and segregation of boron in n Si_xGe_1-x crystal growth was discussed.