The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

15 Crystal Engineering » 15.1 Bulk crystal growth

[9p-S422-1~13] 15.1 Bulk crystal growth

Sat. Mar 9, 2019 1:30 PM - 6:00 PM S422 (S422)

Kei Kamada(Tohoku Univ.), Yuui Yokota(Tohoku Univ.)

4:00 PM - 4:15 PM

[9p-S422-6] The growth of bulk GaN single crystals using Flux-Film-Coated Na flux method.

Fumio Kawamura1, Takashi Taniguchi1 (1.NIMS)

Keywords:Na flux, GaN, substrate

Na flux method has enabled us to synthesize large size and high quality GaN single crystals which can be used for substrates. However, GaN single crystal substrates synthesized by the Na flux method often includes fllux component as inclusion because a lot of small facets appear on the growth surface. Flux-film-coated Na flux method (FFC-LPE) has been known for avoiding generation of facets. We optimized and improved the FFC-LPE method and realized the growth of thick bulk GaN crystals without inclusions.