[9p-W351-1~12] 9.4 Thermoelectric conversion

[9p-W351-11] Large evolution of ZT in p-type nanocrystalline bulk Si-Ge

Muthusamy Omprakash¹, Ghodke Swapnil¹, Kevin Delime_Codrin¹, Masahiro Adachi², Yoshiyuki Yamamoto², 〇Tsunehiro Takeuchi¹ (1.Toyota Tech. Inst., 2.Sumitomo Elec. Ind.)

Keywords:nano-structuring, electronic structure modification

We previously reported a development of high performance n-type Si-Ge based thermoelectric material using electronic structure modification and nano-structuring. Its maximum ZT exceeded 1.8. In this study, we tried to developed a corresponding p-type Si-Ge based thermoelectric material using the same techniqes use used for the n-type materials. As a result, we succeeded in developing p-type Si-Ge based thermoelectric material possessing a large value of ZT exceeding 1.5. This reuslt provides us with the strong potential of Si-Ge based materilas for practrical thermoelectric devices.