[9p-W521-1~16] 17.2 Graphene

[9p-W521-8] Asymmetric Field Screening of h-BN for Carrier Accumulation in Graphene

〇Susumu Okada¹ (1.Univ. of Tsukuba)

Keywords:graphene, h-BN, FET

Using the density functional theory combined with the effective screening medium method, we found that h-BN thin films act as insulating layers for carrier accumulation in graphene under the low carrier concentrations. In contrast, under high carrier concentrations, hole is spilled over the outermost h-BN layer while the most of the electron is still accommodated in graphene, indicating their asymmetric field screening ability for carrier injection in graphene.