[9p-W541-1~8] Science created by singularity in nitride-semiconductors; Development of nano-characterization and control of material properties

[9p-W541-7] AlGaN doping technology and its application to UV emitters

〇Motoaki Iwaya¹, Yuta Kawase¹, Kosuke Sato^1,2, Shinji Yasue¹, Yuya Ogino¹, Sho Iwayama¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,3 (1.Meijo Univ., 2.Asahi-Kasei Corp., 3.ARC Nagoya Univ.)

Keywords:nitride semiconductor, AlGaN, singularity-structure

In the AlGaN-based UV laser diodes, it is the most important issue to realize the device with high current density.In this presentation, we will discuss the investigation results of p-type AlGaN layer using nitride semiconductor based singularity-structure in detail. Also, the improvement of the crystalline quality of AlGaN is very important in realizing a low threshold laser. In particular, it is known that it is extremely difficult to improve the quality of AlGaN in the intermediate composition region with Al composition of about 0.5, but it is useful to utilize the three-dimensional singularity-structure for it, which will also be discussed.