Symposium (Oral)

[9p-W541-1~8] Science created by singularity in nitride-semiconductors; Development of nano-characterization and control of material properties

Sat. Mar 9, 2019 1:30 PM - 6:00 PM W541 (W541)

Ryuji Katayama(Osaka Univ.), Yoichi Kawakami(Kyoto Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 2:00 PM

[9p-W541-1] Three-Dimensional Analysis of Singular Structures in GaN Crystals Using Multiphoton-Excitation Photoluminescence Mapping

〇Tomoyuki Tanikawa¹, Takashi Matsuoka¹ (1.IMR, Tohoku Univ.)

2:00 PM - 2:30 PM

[9p-W541-2] Dislocation characterization in GaN crystals with micro-Raman spectroscopy
and various applications of machine learning for materials researches

〇Toru Ujihara^1,2,3, Nobuhiko Kokubo^2,3, Yosuke Tsunooka^2,3, Fumihiro Fujie², Sho Inotsume^2,3, Shoichi Onda¹, Hisashi Yamada-³, Mitsuaki Shi'is³, Shunta Harada^1,2, Miiho Tarawa^1,2 (1.IMaSS Nagoya Univ., 2.Nagoya Univ., 3.AIST)

2:30 PM - 3:00 PM

[9p-W541-3] Spatio-Time-Resolved CL studies of singularity-structures in nitride semiconductors

〇Shigefusa Chichibu^1,2,3, Kohei Shima¹, Kazunobu Kojima¹ (1.Tohoku Univ., 2.Nagoya Univ., 3.Hokkaido Univ.)

3:00 PM - 3:30 PM

[9p-W541-4] PL mapping of singularity structures around V-pits in InGaN quantum wells by means of scanning near-field optical microscopy

Satoshi Kurai¹, Narihito Okada¹, Kazuyuki Tadatomo¹, 〇Yoichi Yamada¹ (1.Yamaguchi Univ.)

4:00 PM - 4:30 PM

[9p-W541-5] Development of a deep-ultraviolet scanning near-field optical microscope for PL mapping analysis of Al-rich AlGaN singularity-structures

〇Ryota Ishii¹, Mitsuru Funato¹, Yoichi Kawakami¹ (1.Kyoto Univ.)

4:30 PM - 5:00 PM

[9p-W541-6] Polarization mapping of nitride semiconductors using laser THz emission microscopy

〇Iwao Kawayama¹ (1.ILE, Osaka Univ.)

5:00 PM - 5:30 PM

[9p-W541-7] AlGaN doping technology and its application to UV emitters

〇Motoaki Iwaya¹, Yuta Kawase¹, Kosuke Sato^1,2, Shinji Yasue¹, Yuya Ogino¹, Sho Iwayama¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,3 (1.Meijo Univ., 2.Asahi-Kasei Corp., 3.ARC Nagoya Univ.)

5:30 PM - 6:00 PM

[9p-W541-8] Doping technique utilizing graded AlGaN superlattices and its application to UV LEDs

〇Kazuaki Ebata¹, Yoshitaka Taniyasu¹, Kazuhide Kumakura¹ (1.NTT BRL)

Sessions

Symposium » Science created by singularity in nitride-semiconductors; Development of nano-characterization and control of material properties