[9p-W541-1~8] Science created by singularity in nitride-semiconductors; Development of nano-characterization and control of material properties

[9p-W541-2] Dislocation characterization in GaN crystals with micro-Raman spectroscopy
and various applications of machine learning for materials researches

〇Toru Ujihara^1,2,3, Nobuhiko Kokubo^2,3, Yosuke Tsunooka^2,3, Fumihiro Fujie², Sho Inotsume^2,3, Shoichi Onda¹, Hisashi Yamada-³, Mitsuaki Shi'is³, Shunta Harada^1,2, Miiho Tarawa^1,2 (1.IMaSS Nagoya Univ., 2.Nagoya Univ., 3.AIST)

Keywords:characterization, machine learning, crystal growth

Machine learning becomes a important research tool. We have applied the machine learning to SiC and GaN crystal growth and characterization. One is that we developed the method of characterization of dislocation in GaN with micro-Raman spectroscopy and machine learning. The other is that we can apply this technology for the optimization of growth condition of SiC crystal growth. In addition, we are trying to apply this method for GaN crystal growth.