[9p-W631-1~11] 3.7 Laser processing

△ [9p-W631-6] Al doping of 4H-SiC by excimer laser irradiation to Al₂O₃ thin films

〇(B)Kosei Kamada¹, Toshifumi Kikuchi^1,2, Daisuke Nakamura¹, Hiroshi Ikenoue^1,2 (1.Kyushu Univ., 2.Dept. of Gigaphoton Next GLP, Kyushu Univ.)

Keywords:4H-SiC, excimer laser, laser doping

Silicon carbide is well known wide bandgap semiconductor and superior material properties. However, fabrication cost of SiC power device become very high and carbon atoms may segregate from SiC, because high temperature ion implantation and annealing are needed for doping. Therefore, law-temperature process for doping are needed for spread of SiC power devices. We have investigated a laser doping method for high-concentration, low-temperature doping and reported that heavy Al doping of 4H-SiC can be achieved by KrF excimer laser irradiation to thin Al films formed on the SiC substrate. Recently, we have used Al₂O₃ film to perform laser doping of Al with lower irradiation energy than laser ablation using Al film.