Ryota Ochi

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Speaker, Author, Co-Author

Thu. Sep 10, 2020 1:00 PM - 5:30 PM Z04

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[10p-Z04-1~17] 13.7 Compound and power electron devices and process technology

3:15 PM - 3:30 PM

△ [10p-Z04-9] Gate controllability of HfSiO_x-gate AlGaN/GaN MOS-HEMT

〇Ryota Ochi¹, Erika Maeda^2,3, Toshihide Nabatame², Koji Shiozaki⁴, Tamotsu Hashizume^1,4 (1.RCIQE, 2.NIMS, 3.SIT, 4.Nagoya Univ.)