Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[10p-Z04-1~17] 13.7 Compound and power electron devices and process technology

Thu. Sep 10, 2020 1:00 PM - 5:30 PM Z04

Taketomo Sato(Hokkaido Univ.), Toshiharu Kubo(Nagoya Inst. of Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

[10p-Z04-1] GaN Through-substrate Via Process for GaN-on-GaN HEMTs using High-rate ICP Etching

〇Naoya Okamoto^1,2, Atsushi Takahashi^1,2, Yuichi Minoura^1,2, Yusuke Kumazaki^1,2, Shiro Ozaki^1,2, Toshihiro Ohki^1,2 (1.Fujitsu Limited, 2.Fujitsu Laboratories)

1:15 PM - 1:30 PM

[10p-Z04-2] Optimization of Device Structure of Lateral GaN Fin FETs

〇(B)Yusuke Hisatsune¹, Sangwoo Kim¹, Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1.Tokyo Tech)

1:30 PM - 1:45 PM

[10p-Z04-3] Fabrication of GaN FinFETs using selective area growth: Suppression of leakage

〇Ken Takayama¹, Takashi Ota¹, Mitsutaka Sasaki¹, Hayato Mukai¹, Takuya Hamada¹, Tokio Takahashi², Toshihide Ide², Mitsuaki Shimizu², Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1.Tokyo Tech, 2.AIST)

1:45 PM - 2:00 PM

[10p-Z04-4] Buffer Layer Structure Dependence of Electrical Characteristics of AlGaN/GaN HEMTs Fabricated on GaN substrates

〇Hidemasa Takahashi¹, Yuji Ando¹, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)

2:00 PM - 2:15 PM

[10p-Z04-5] Two-dimensional characterization of PEC gate-recess-etched AlGaN/GaN HEMT structure by scanning internal photoemission microscopy

〇Yuto Kawasumi¹, Fumimasa Horikiri², Noboru Fukuhara², Kenji Shiojima¹ (1.Univ. of Fukui, 2.SCIOCS Co.)

2:15 PM - 2:30 PM

▲ [10p-Z04-6] Side gate modulation of AlGaN/GaN HEMTs on GaN with C and Fe doped buffers

〇(PC)Maria Villamin¹, Takaaki Kondo¹, Naotaka Iwata¹ (1.Toyota Technological Institute)

2:30 PM - 2:45 PM

[10p-Z04-7] AlGaN/p-GaN gate-structure for lateral GaN FET and its threshold voltage

〇Masashi Tanimoto¹, Jun Akamatsu¹, Shinichi Tada¹, Yuji Ohmaki¹, Naruhito Iwasa¹, Takashi Mukai¹ (1.Nichia Corporation)

2:45 PM - 3:00 PM

[10p-Z04-8] Current conduction in ALD-Al₂O₃/GaN capacitors formed by post-deposition annealing

〇Atsushi Hiraiwa^1,4, Kiyotaka Horikawa², Satoshi Okubo², Hiroshi Kawarada^1,2,3 (1.RONLI, Waseda Univ., 2.FSE, Waseda Univ., 3.KMLMST, Waseda Univ., 4.IMaSS, Nagoya Univ.)

3:15 PM - 3:30 PM

△ [10p-Z04-9] Gate controllability of HfSiO_x-gate AlGaN/GaN MOS-HEMT

〇Ryota Ochi¹, Erika Maeda^2,3, Toshihide Nabatame², Koji Shiozaki⁴, Tamotsu Hashizume^1,4 (1.RCIQE, 2.NIMS, 3.SIT, 4.Nagoya Univ.)

3:30 PM - 3:45 PM

△ [10p-Z04-10] [Highlight]Operand observation of local piezoelectric lattice deformation in AlGaN/GaN HEMT devices by synchrotron radiation nanobeam X-ray diffraction

〇Akihiro Shimada¹, Haruna Shiomi¹, Tetsuya Tohei¹, Yusuke Hayashi¹, Shota Kaneki², Tamotsu Hasizume², Yasuhiko Imai³, Kazushi Sumitani³, Shigeru Kimura³, Akira Sakai¹ (1.Grad. Sch. of Eng. Sci., Osaka Univ., 2.RCIQE, Hokkaido Univ., 3.JASRI)

3:45 PM - 4:00 PM

△ [10p-Z04-11] Comparison of characteristics of HfAlO_x, HfSiO_x, AlSiO_x, Al₂O₃, and HfO₂ gate dielectrics for GaN power devices

〇(M2)Erika Maeda^1,2, Toshihide Nabatame², Masafumi Hirose^1,2, Mari Inoue², Akihiko Ohi², Naoki Ikeda², Koji Shiozaki³, Tamotsu Hashizume⁴, Hajime kiyono¹ (1.SIT, 2.NIMS, 3.Nagoya Univ., 4.Hokkaido Univ.)

4:00 PM - 4:15 PM

△ [10p-Z04-12] Tempereture Dependence of Anomalous Fixed Charge Generation due to Forming Gas Annealing in SiO₂/GaN MOS devices

〇Hidetoshi Mizobata¹, Yuhei Wada¹, Mikito Nozaki¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

4:15 PM - 4:30 PM

△ [10p-Z04-13] Impact of AlGaN Barrier Layer on p-GaN for Characterization of MIS Electrical Properties

〇(M2)Yuhei Wada¹, Hidetoshi Mizobata¹, Mikito Nozaki¹, Takuji Hosoi¹, Tetsu Kachi², Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.Nagoya Univ.)

4:30 PM - 4:45 PM

[10p-Z04-14] Electrical properties of AlGaN/GaN MIS-HEMTs with SiO₂/Al₂O₃ double insulators fabricated by ALD Ⅱ

〇Shunichi Yokoi¹, Toshiharu Kubo¹, Takashi Egawa¹ (1.Nagoya Inst. of Tech)

4:45 PM - 5:00 PM

[10p-Z04-15] Open spaces in TEOS-SiO₂ film deposited on GaN probed by means of positron annihilation

〇Akira Uedono¹, Wataru Ueno¹, Takuji Hosoi², Werner Egger³, Christoph Hugenschmidt³, Marcel Dickmann⁴, Heiji Watanabe² (1.Univ. of Tsukuba, 2.Osaka Univ., 3.UniBwM, 4.TUM)

5:00 PM - 5:15 PM

[10p-Z04-16] Effect of heat treatment atmosphere on V_FB shift of SiO₂/GaN MOS structure

〇Taiki Hirano¹, Mutsunori Uenuma¹, Masaaki Furukawa¹, Yukiharu Uraoka¹, Hideaki Adachi¹ (1.NAIST)

5:15 PM - 5:30 PM

[10p-Z04-17] Characterization of MOS Capacitors Formed on Dry-etched GaN surfaces

〇(M2)KyungPil NAM¹, Takashi Ishida^1,2, Shinji Yamada^1,2,3, Matys Maciej², Tetsu Kachi², Jun Suda^1,2 (1.Nagoya Univ, 2.Nagoya Univ.IMaSS, 3.ULVAC ISET)

Session information

[10p-Z04-1~17] 13.7 Compound and power electron devices and process technology

[10p-Z04-1] GaN Through-substrate Via Process for GaN-on-GaN HEMTs using High-rate ICP Etching

[10p-Z04-2] Optimization of Device Structure of Lateral GaN Fin FETs

[10p-Z04-3] Fabrication of GaN FinFETs using selective area growth: Suppression of leakage

[10p-Z04-4] Buffer Layer Structure Dependence of Electrical Characteristics of AlGaN/GaN HEMTs Fabricated on GaN substrates

[10p-Z04-5] Two-dimensional characterization of PEC gate-recess-etched AlGaN/GaN HEMT structure by scanning internal photoemission microscopy

▲ [10p-Z04-6] Side gate modulation of AlGaN/GaN HEMTs on GaN with C and Fe doped buffers

[10p-Z04-7] AlGaN/p-GaN gate-structure for lateral GaN FET and its threshold voltage

[10p-Z04-8] Current conduction in ALD-Al₂O₃/GaN capacitors formed by post-deposition annealing

△ [10p-Z04-9] Gate controllability of HfSiO_x-gate AlGaN/GaN MOS-HEMT

△ [10p-Z04-10] [Highlight]Operand observation of local piezoelectric lattice deformation in AlGaN/GaN HEMT devices by synchrotron radiation nanobeam X-ray diffraction

△ [10p-Z04-11] Comparison of characteristics of HfAlO_x, HfSiO_x, AlSiO_x, Al₂O₃, and HfO₂ gate dielectrics for GaN power devices

△ [10p-Z04-12] Tempereture Dependence of Anomalous Fixed Charge Generation due to Forming Gas Annealing in SiO₂/GaN MOS devices

△ [10p-Z04-13] Impact of AlGaN Barrier Layer on p-GaN for Characterization of MIS Electrical Properties

[10p-Z04-14] Electrical properties of AlGaN/GaN MIS-HEMTs with SiO₂/Al₂O₃ double insulators fabricated by ALD Ⅱ

[10p-Z04-15] Open spaces in TEOS-SiO₂ film deposited on GaN probed by means of positron annihilation

[10p-Z04-16] Effect of heat treatment atmosphere on V_FB shift of SiO₂/GaN MOS structure

[10p-Z04-17] Characterization of MOS Capacitors Formed on Dry-etched GaN surfaces

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Session information

[10p-Z04-1~17] 13.7 Compound and power electron devices and process technology

▲ [10p-Z04-6] Side gate modulation of AlGaN/GaN HEMTs on GaN with C and Fe doped buffers

△ [10p-Z04-9] Gate controllability of HfSiOx-gate AlGaN/GaN MOS-HEMT

△ [10p-Z04-10] [Highlight]Operand observation of local piezoelectric lattice deformation in AlGaN/GaN HEMT devices by synchrotron radiation nanobeam X-ray diffraction

△ [10p-Z04-11] Comparison of characteristics of HfAlOx, HfSiOx, AlSiOx, Al2O3, and HfO2 gate dielectrics for GaN power devices

△ [10p-Z04-12] Tempereture Dependence of Anomalous Fixed Charge Generation due to Forming Gas Annealing in SiO2/GaN MOS devices

△ [10p-Z04-13] Impact of AlGaN Barrier Layer on p-GaN for Characterization of MIS Electrical Properties

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△ [10p-Z04-9] Gate controllability of HfSiO_x-gate AlGaN/GaN MOS-HEMT

△ [10p-Z04-11] Comparison of characteristics of HfAlO_x, HfSiO_x, AlSiO_x, Al₂O₃, and HfO₂ gate dielectrics for GaN power devices

△ [10p-Z04-12] Tempereture Dependence of Anomalous Fixed Charge Generation due to Forming Gas Annealing in SiO₂/GaN MOS devices