Ken Takayama

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Speaker, Author, Co-Author

Thu. Sep 10, 2020 1:00 PM - 5:30 PM Z04

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[10p-Z04-1~17] 13.7 Compound and power electron devices and process technology

1:30 PM - 1:45 PM

[10p-Z04-3] Fabrication of GaN FinFETs using selective area growth: Suppression of leakage

〇Ken Takayama¹, Takashi Ota¹, Mitsutaka Sasaki¹, Hayato Mukai¹, Takuya Hamada¹, Tokio Takahashi², Toshihide Ide², Mitsuaki Shimizu², Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1.Tokyo Tech, 2.AIST)

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