4:30 PM - 4:45 PM [10p-Z04-14] Electrical properties of AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD Ⅱ 〇Shunichi Yokoi1, Toshiharu Kubo1, Takashi Egawa1 (1.Nagoya Inst. of Tech)