Naoya Okamoto

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Speaker, Author, Co-Author

Thu. Sep 10, 2020 1:00 PM - 5:30 PM Z04

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[10p-Z04-1~17] 13.7 Compound and power electron devices and process technology

1:00 PM - 1:15 PM

[10p-Z04-1] GaN Through-substrate Via Process for GaN-on-GaN HEMTs using High-rate ICP Etching

〇Naoya Okamoto^1,2, Atsushi Takahashi^1,2, Yuichi Minoura^1,2, Yusuke Kumazaki^1,2, Shiro Ozaki^1,2, Toshihiro Ohki^1,2 (1.Fujitsu Limited, 2.Fujitsu Laboratories)

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