Hidemasa Takahashi

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Speaker, Author, Co-Author

Thu. Sep 10, 2020 9:30 AM - 12:00 PM Z04

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[10a-Z04-1~9] 13.7 Compound and power electron devices and process technology

10:00 AM - 10:15 AM

[10a-Z04-3] Recess Length Dependence of Electrical Characteristics of GaN Gated-Anode Diodes

〇Hidemasa Takahashi¹, Yuji Ando¹, Ryohei Yamaguchi³, Akio Wakejima³, Jun Suda^1,2 (1.Nagoya Univ., 2.Naogya Univ. IMaSS, 3.Nagoya Institute of Technology)

Thu. Sep 10, 2020 1:00 PM - 5:30 PM Z04

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[10p-Z04-1~17] 13.7 Compound and power electron devices and process technology

1:45 PM - 2:00 PM

[10p-Z04-4] Buffer Layer Structure Dependence of Electrical Characteristics of AlGaN/GaN HEMTs Fabricated on GaN substrates

〇Hidemasa Takahashi¹, Yuji Ando¹, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)

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