Shuichi Noda

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Speaker, Author, Co-Author

Thu. Sep 10, 2020 8:45 AM - 11:30 AM Z10

Oral presentation
| 13 Semiconductors
| 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[10a-Z10-1~10] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

9:00 AM - 9:15 AM

[10a-Z10-2] AlN Film Characteristics Deposited by Minimal Fab Reactive Sputtering Tool

〇Shuichi Noda¹, Fumito Imura¹, Yuuki Yabuta³, Naoko Yamamoto³, Ryuichiro Kamei³, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (1.AIST, 2.MINIMAL, 3.Seinan-kogyo)

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