Satoshi Kurai

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Speaker, Author, Co-Author

Thu. Sep 10, 2020 1:00 PM - 7:15 PM Z02

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[10p-Z02-1~22] 15.4 III-V-group nitride crystals

6:30 PM - 6:45 PM

[10p-Z02-20] Potential Barrier in InGaN Single Quantum Well Structure on Moderate-Temperature-Grown GaN as Pit Formation Layer

〇Satoshi Kurai¹, Junji Gao¹, Ryoga Makio¹, Naoya Hayashi¹, Shota Yuasa¹, Narihito Okada¹, Kazuyuki Tadatomo¹, Yoichi Yamada¹ (1.Yamaguchi Univ.)