Kazuki Ohnishi

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Speaker, Author, Co-Author

Thu. Sep 10, 2020 1:00 PM - 7:15 PM Z02

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[10p-Z02-1~22] 15.4 III-V-group nitride crystals

2:30 PM - 2:45 PM

△ [10p-Z02-6] Fabrication of p-type GaN film grown by halide vapor phase epitaxy utilizing MgO

〇(D)Kazuki Ohnishi¹, Yuki Amao¹, Naoki Fujimoto², Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4 (1.Dept. of Electronics, Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.ARC, Nagoya Univ., 4.VBL, Nagoya Univ.)

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